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| FDD8453LZ N-Channel PowerTrench(R) MOSFET September 2007 FDD8453LZ N-Channel PowerTrench(R) MOSFET 40V, 50A, 6.7m Features Max rDS(on) = 6.7m at VGS = 10V, ID = 15A Max rDS(on) = 8.7m at VGS = 4.5V, ID = 13A HBM ESD protection level >7kV typical (Note 4) RoHS Compliant tm General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench(R) process that has been especially tailored to minimize the on-state resistance and switching loss. G-S zener has been added to enhance ESD voltage level. Applications Inverter Synchronous Rectifier D D G S G D -PA52 TO -2 K (TO -252) S MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDS VGS Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) ID -Continuous (Silicon limited) -Continuous -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy Power Dissipation Power Dissipation TC = 25C TA = 25C (Note 1a) (Note 3) TC = 25C TC = 25C TA = 25C (Note 1a) Ratings 40 20 50 75 16.4 100 253 65 3.1 -55 to +150 mJ W C A Units V V Operating and Storage Junction Temperature Range Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient (Note 1a) 1.9 40 C/W Package Marking and Ordering Information Device Marking FDD8453LZ Device FDD8453LZ Package D-PAK (TO-252) Reel Size 13'' Tape Width 12mm Quantity 2500 units (c)2007 Fairchild Semiconductor Corporation FDD8453LZ Rev.C 1 www.fairchildsemi.com FDD8453LZ N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V ID = 250A, referenced to 25C VDS = 32V, VGS = 0V VGS = 20V, VDS = 0V 40 36 1 10 V mV/C A A On Characteristics VGS(th) VGS(th) TJ Gate to Source Threshold Voltage Gate to Source Threshold Voltage Temperature Coefficient VGS = VDS, ID = 250A ID = 250A, referenced to 25C VGS = 10V, ID = 15A rDS(on) Static Drain to Source On Resistance VGS = 4.5V, ID = 13A VGS = 10V, ID = 15A, TJ = 125C VDS = 5V, ID = 15A 1.0 1.8 -6.0 5.8 6.8 9.1 77 6.7 8.7 10.6 S m 3.0 V mV/C gFS Forward Transconductance Dynamic Characteristics Ciss Coss Crss Rg Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance VDS = 20V, VGS = 0V, f = 1MHz f = 1MHz 2640 320 190 2.3 3515 425 285 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qg Qgs Qgd Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Total Gate Charge Gate to Source Charge Gate to Drain "Miller" Charge VGS = 0V to 10V VGS = 0V to 5V VDD = 20V, ID = 15A VDD = 20V, ID = 15A, VGS = 10V, RGEN = 6 11 6 37 5 46 24 7 8 19 12 58 10 64 33 ns ns ns ns nC nC nC nC Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS = 0V, IS = 2.0A VGS = 0V, IS = 15A (Note 2) (Note 2) 0.7 0.8 25 20 1.2 1.3 40 32 V ns nC IF = 15A, di/dt = 100A/s Notes: 1: RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design. a) 40C/W when mounted on a 1 in2 pad of 2 oz copper b) 96C/W when mounted on a minimum pad. 2: Pulse Test: Pulse Width < 300s, Duty cycle < 2.0%. 3: Starting TJ = 25C, L = 3mH, IAS = 13A, VDD = 40V, VGS = 10V. 4: The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied. (c)2007 Fairchild Semiconductor Corporation FDD8453LZ Rev.C 2 www.fairchildsemi.com FDD8453LZ N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 100 ID, DRAIN CURRENT (A) 4.0 VGS = 10V VGS = 4.5V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX VGS = 4V 3.5 VGS = 3V PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX 80 60 3.0 VGS = 3.5V VGS = 3.5V 2.5 2.0 1.5 1.0 0.5 VGS = 4.5V VGS = 10V VGS = 4V 40 20 VGS = 3V 0 0.0 0.4 0.8 1.2 1.6 2.0 0 20 40 60 80 100 VDS, DRAIN TO SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics Figure 2. Normalized On-Resistance vs Drain Current and Gate Voltage 1.8 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 21 SOURCE ON-RESISTANCE (m) ID = 15A VGS = 10V 1.6 1.4 1.2 1.0 0.8 0.6 -75 18 15 12 ID = 15A PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX rDS(on), DRAIN TO TJ = 125oC 9 TJ = 25oC 6 3 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 2 4 6 8 10 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On- Resistance vs Junction Temperature 100 PULSE DURATION = 80s DUTY CYCLE = 0.5%MAX IS, REVERSE DRAIN CURRENT (A) Figure 4. On-Resistance vs Gate to Source Voltage 100 VGS = 0V 80 ID, DRAIN CURRENT (A) 10 1 0.1 0.01 1E-3 0.0 TJ = 150oC VDS = 5V 60 40 20 0 1 TJ = 150oC TJ = 25oC TJ = -55oC TJ = 25oC TJ = -55oC 2 3 4 5 0.2 0.4 0.6 0.8 1.0 1.2 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs Source Current (c)2007 Fairchild Semiconductor Corporation FDD8453LZ Rev.C 3 www.fairchildsemi.com FDD8453LZ N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 10 VGS, GATE TO SOURCE VOLTAGE(V) ID = 15A 4000 Ciss CAPACITANCE (pF) VDD = 15V 8 6 VDD = 20V 1000 Coss Crss f = 1MHz VGS = 0V 4 VDD = 25V 2 0 0 10 20 30 40 50 Qg, GATE CHARGE (nC) 100 0.1 1 10 40 VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage 10 Ig, GATE LEAKAGE CURRENT(uA) 4 20 IAS, AVALANCHE CURRENT(A) 10 10 10 10 10 10 10 3 VGS = 0V 10 2 1 TJ = 150oC 0 TJ = 125oC TJ = 25oC -1 TJ = 25oC -2 -3 1 0.01 0.1 1 10 100 1000 10 -4 0 5 10 15 20 25 30 tAV, TIME IN AVALANCHE (ms) VGS, GATE TO SOURCE VOLTAGE (V) Figure 9. Unclamped Inductive Switching Capability 80 ID, DRAIN CURRENT (A) Figure 10. Gate Leakage Current vs Gate to Source Voltage 200 100 ID, DRAIN CURRENT (A) 60 VGS = 10V 100us 10 THIS AREA IS LIMITED BY rds(on) 40 VGS = 4.5V Limited by Package 1ms 10ms DC 20 RJC = 1.9 C/W o 1 SINGLE PULSE TJ = MAX RATED RJC = 1.9 C/W TC = 25oC o 0 25 50 75 100 o 125 150 0.1 0.1 1 10 100 TC, CASE TEMPERATURE ( C) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Maximum Continuous Drain Current vs Ambient Temperature Figure 12. Forward Bias Safe Operating Area (c)2007 Fairchild Semiconductor Corporation FDD8453LZ Rev.C 4 www.fairchildsemi.com FDD8453LZ N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 8000 VGS =10V P(PK), PEAK TRANSIENT POWER (W) FOR TEMPERATURES 1000 ABOVE 25oC DERATE PEAK o SINGLE PULSE RFOLLOWS: CURRENT AS JC = 1.9 C/W 150 - T oC TC = 25 C -----------------------I = I25 125 TC = 25oC 100 50 -5 10 -4 -3 -2 -1 0 1 2 3 10 10 10 10 10 10 10 10 t, PULSE WIDTH (s) Figure 13. Single Pulse Maximum Power Dissipation 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.01 0.005 -5 10 SINGLE PULSE RJC = 1.9 C/W o 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t, RECTANGULAR PULSE DURATION (s) Figure 14. Transient Thermal Response Curve 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 SINGLE PULSE 0.01 0.005 RJA = 40 C/W (Note 1a) -3 o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0 1 2 3 10 10 -2 10 -1 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 15. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDD8453LZ Rev.C 5 www.fairchildsemi.com FDD8453LZ N-Channel PowerTrench(R) MOSFET Typical Characteristics TJ = 25C unless otherwise noted 2 1 NORMALIZED THERMAL IMPEDANCE, ZJA DUTY CYCLE-DESCENDING ORDER 0.1 D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 SINGLE PULSE RJA = 96 C/W (Note 1b) o NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJA x RJA + TA 0 1 2 3 0.002 10 -3 10 -2 10 -1 10 10 10 10 t, RECTANGULAR PULSE DURATION (s) Figure 16. Transient Thermal Response Curve (c)2007 Fairchild Semiconductor Corporation FDD8453LZ Rev.C 6 www.fairchildsemi.com FDD8453LZ N-Channel PowerTrench(R) MOSFET TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Build it NowTM CorePLUSTM CROSSVOLTTM CTLTM Current Transfer LogicTM EcoSPARK(R) (R) Fairchild(R) Fairchild Semiconductor(R) FACT Quiet SeriesTM FACT(R) FAST(R) FastvCoreTM FPSTM FRFET(R) Global Power ResourceSM Green FPSTM Green FPSTM e-SeriesTM GTOTM i-LoTM IntelliMAXTM ISOPLANARTM MegaBuckTM MICROCOUPLERTM MicroFETTM MicroPakTM MillerDriveTM Motion-SPMTM OPTOLOGIC(R) OPTOPLANAR(R) (R) PDP-SPMTM Power220(R) Power247(R) POWEREDGE(R) Power-SPMTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM The Power Franchise(R) TinyBoostTM TinyBuckTM TinyLogic(R) TINYOPTOTM TinyPowerTM TinyPWMTM TinyWireTM SerDesTM UHC(R) UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. tm Rev. I31 Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. No Identification Needed Full Production Obsolete Not In Production (c)2007 Fairchild Semiconductor Corporation FDD8453LZ Rev.C 7 www.fairchildsemi.com |
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